2N3738 Datasheet and Replacement
Type Designator: 2N3738
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 225 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO66
2N3738 Substitution
2N3738 Datasheet (PDF)
2n3738.pdf

2N3738MECHANICAL DATAPOWER TRANSISTORSDimensions in mmNPN SILICON6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.1 2FEATURES Hermetically Packaged. Low Saturation Voltage High Gain1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Package (TO-213AA)Pin 1 = Base Pin 2 = Emitter Case = CollectorA
2n3735csm4.pdf

2N3735CSM4Medium Current NPN Silicon AnnularTransistors Designed for High-SpeedSwitching and Driver Applications in aCeramic Surface Mount PackageMECHANICAL DATADimensions in mm (inches)1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)FEATURES0.23rad.(0.009) High Voltage3 2 Ceramic Surface Mount Package0.234 1min
2n3734.pdf

2N3734Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 1.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
Datasheet: 2N3734A , 2N3734S , 2N3735 , 2N3735S , 2N3736 , 2N3736A , 2N3737 , 2N3737A , TIP31C , 2N3739 , 2N374 , 2N3740 , 2N3740A , 2N3740AR , 2N3741 , 2N3741A , 2N3741R .
Keywords - 2N3738 transistor datasheet
2N3738 cross reference
2N3738 equivalent finder
2N3738 lookup
2N3738 substitution
2N3738 replacement



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