KSB834 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSB834  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 9 MHz

Capacitancia de salida (Cc): 150 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO220

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KSB834 datasheet

 ..1. Size:70K  fairchild semi
 ksb834.pdf pdf_icon

KSB834

KSB834 Low Frequency Power Amplifier Complement to KSD880 TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current - 3 A IB Base Current - 0.5 A PC

 0.1. Size:28K  fairchild semi
 ksb834w.pdf pdf_icon

KSB834

KSB834W Low Frequency Power Amplifier Complement to KSD880W 1 D2-PAK 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current - 3 A IB Base Current - 0.5 A P

 0.2. Size:147K  onsemi
 ksb834w.pdf pdf_icon

KSB834

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.3. Size:216K  inchange semiconductor
 ksb834w.pdf pdf_icon

KSB834

isc Silicon PNP Power Transistor KSB834W DESCRIPTION Complement to KSD880W 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Bas

MOSTRAR MÁS

Otros transistores... KSB810Y, KSB811, KSB811G, KSB811O, KSB811Y, KSB817, KSB817O, KSB817Y, C5198, KSB834O, KSB834Y, KSB906, KSB906O, KSB906Y, KSB907, KSC1008, KSC1008G