KSB834 Datasheet and Replacement

KSB834Low Frequency Power Amplifier Complement to KSD880TO-22011.Base 2.Collector 3.EmitterPNP Silicon Epitaxial TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current - 3 AIB Base Current - 0.5 A PC

KSB834WLow Frequency Power Amplifier Complement to KSD880W1 D2-PAK1.Base 2.Collector 3.EmitterPNP Silicon Epitaxial TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current - 3 AIB Base Current - 0.5 A P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc Silicon PNP Power Transistor KSB834WDESCRIPTIONComplement to KSD880W100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -60 VCEOV Emitter-Bas