KSC2310Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSC2310Y
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar KSC2310Y
KSC2310Y Datasheet (PDF)
ksc2310.pdf
KSC2310High Voltage Power Amplifier Collector-Base Voltage : VCBO=200V Current Gain Bandwidth Product : fT=100MHzTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 150 VVEBO Emitter-Base Voltage 5
ksc2310.pdf
KSC2310 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER AMPLIFIER Collector - Base Voltage VCBO=200V TO-92L Current Gain-Bandwidth Product fT=100MHzABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 200VCollector-Emitter Voltage VCEO 150VEmitter-Base Voltage VEBO 5mACollector Current IC 50mWCollector Dissipation
ksc2316.pdf
KSC2316Audio Power Amplifier Applications Driver Stage Amplifier Complement to KSA916TO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 120 VVCEO Collector-Emitter Voltage 120 VVEBO Emitter-Base Voltage 5 VIC Collector Current 800
ksc2316.pdf
KSC2316 NPN EPITAXIAL SILICON TRANSISTORAUDIO POWER AMPLIFIER APPLICATIONS Driver Stage Amplifier TO-92L Complement to KSA916ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage VEBO 5 VCollector Current IC 800 mACollector Dissipation PC 900 mWJunction Temperature
ksc2316.pdf
KSC2316 TO-92MOD Transistor (NPN)TO-92MOD11. EMITTER 2 3 2. COLLECTOR 3. BASE Features Driver stage amplifier 5.8006.200 Complement to KSA916 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Value Units0.4000.600VCBO Collector-Base Voltage 120 V 13.800VCEO Collector-Emitter Voltage 120 V 14.200VEBO Emit
ksc2316 to-92l.pdf
KSC2316 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR3. BASE 4.700 2 3 5.1001Features Driver stage amplifier 7.8008.200 Complement to KSA916 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage 120 V 13.80014.200VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
