All Transistors. KSC2310Y Datasheet

 

KSC2310Y Datasheet, Equivalent, Cross Reference Search


   Type Designator: KSC2310Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92

 KSC2310Y Transistor Equivalent Substitute - Cross-Reference Search

   

KSC2310Y Datasheet (PDF)

 7.1. Size:41K  fairchild semi
ksc2310.pdf

KSC2310Y
KSC2310Y

KSC2310High Voltage Power Amplifier Collector-Base Voltage : VCBO=200V Current Gain Bandwidth Product : fT=100MHzTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 150 VVEBO Emitter-Base Voltage 5

 7.2. Size:66K  samsung
ksc2310.pdf

KSC2310Y
KSC2310Y

KSC2310 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER AMPLIFIER Collector - Base Voltage VCBO=200V TO-92L Current Gain-Bandwidth Product fT=100MHzABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 200VCollector-Emitter Voltage VCEO 150VEmitter-Base Voltage VEBO 5mACollector Current IC 50mWCollector Dissipation

 8.1. Size:41K  fairchild semi
ksc2316.pdf

KSC2310Y
KSC2310Y

KSC2316Audio Power Amplifier Applications Driver Stage Amplifier Complement to KSA916TO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 120 VVCEO Collector-Emitter Voltage 120 VVEBO Emitter-Base Voltage 5 VIC Collector Current 800

 8.2. Size:59K  samsung
ksc2316.pdf

KSC2310Y
KSC2310Y

KSC2316 NPN EPITAXIAL SILICON TRANSISTORAUDIO POWER AMPLIFIER APPLICATIONS Driver Stage Amplifier TO-92L Complement to KSA916ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage VEBO 5 VCollector Current IC 800 mACollector Dissipation PC 900 mWJunction Temperature

 8.3. Size:166K  lge
ksc2316.pdf

KSC2310Y
KSC2310Y

KSC2316 TO-92MOD Transistor (NPN)TO-92MOD11. EMITTER 2 3 2. COLLECTOR 3. BASE Features Driver stage amplifier 5.8006.200 Complement to KSA916 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Value Units0.4000.600VCBO Collector-Base Voltage 120 V 13.800VCEO Collector-Emitter Voltage 120 V 14.200VEBO Emit

 8.4. Size:170K  lge
ksc2316 to-92l.pdf

KSC2310Y
KSC2310Y

KSC2316 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR3. BASE 4.700 2 3 5.1001Features Driver stage amplifier 7.8008.200 Complement to KSA916 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage 120 V 13.80014.200VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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