KSC3552O Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSC3552O  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 1100 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 15 MHz

Capacitancia de salida (Cc): 215 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3P

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KSC3552O datasheet

 7.1. Size:55K  fairchild semi
 ksc3552.pdf pdf_icon

KSC3552O

KSC3552 High Voltage and High Reliabilty High Speed Switching Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 12 A ICP Collector Current (

 9.1. Size:153K  fairchild semi
 ksc3503 2sc3503.pdf pdf_icon

KSC3552O

March 2008 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage VCEO= 300V Low Reverse Transfer Capacitance Cre= 1.8pF at VCB = 30V TO-126 1 Excellent Gain Linearity for low THD 1. Emitter 2.Collector 3.Base High Frequency

 9.2. Size:56K  fairchild semi
 ksc3503.pdf pdf_icon

KSC3552O

KSC3503 CRT Display, Video Output High Voltage VCEO=300V Low Reverse Transfer Capacitance Cre=1.8pF @ VCB=30V TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V

 9.3. Size:58K  fairchild semi
 ksc3502.pdf pdf_icon

KSC3552O

KSC3502 CRT Display, Video Output High Voltage VCEO=200V Low Reverse Transfer Capacitance Cre=1.2pF @ VCB=30V TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V

MOSTRAR MÁS

Otros transistores... KSC3502F, KSC3503, KSC3503C, KSC3503D, KSC3503E, KSC3503F, KSC3552, KSC3552N, A1013, KSC3552R, KSC3569, KSC388, KSC3953, KSC3953C, KSC3953D, KSC5020, KSC5020O