All Transistors. KSC3552O Datasheet

 

KSC3552O Datasheet and Replacement


   Type Designator: KSC3552O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 1100 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 215 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3P
      - BJT Cross-Reference Search

   

KSC3552O Datasheet (PDF)

 7.1. Size:55K  fairchild semi
ksc3552.pdf pdf_icon

KSC3552O

KSC3552High Voltage and High Reliabilty High Speed Switching Wide SOATO-3P11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 VVEBO Emitter-Base Voltage 7 VIC Collector Current (DC) 12 AICP Collector Current (

 9.1. Size:153K  fairchild semi
ksc3503 2sc3503.pdf pdf_icon

KSC3552O

March 20082SC3503/KSC3503NPN Epitaxial Silicon TransistorApplications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30VTO-1261 Excellent Gain Linearity for low THD1. Emitter 2.Collector 3.Base High Frequency:

 9.2. Size:56K  fairchild semi
ksc3503.pdf pdf_icon

KSC3552O

KSC3503CRT Display, Video Output High Voltage : VCEO=300V Low Reverse Transfer Capacitance : Cre=1.8pF @ VCB=30VTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V

 9.3. Size:58K  fairchild semi
ksc3502.pdf pdf_icon

KSC3552O

KSC3502CRT Display, Video Output High Voltage : VCEO=200V Low Reverse Transfer Capacitance: Cre=1.2pF @ VCB=30VTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FJC1386 | BU3150BF | 2SC5310 | 2SC1249 | 2SA1980UF | 2SB1199 | BU106

Keywords - KSC3552O transistor datasheet

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