KSC5021 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSC5021  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 500 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 18 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO220

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KSC5021 datasheet

 ..1. Size:302K  fairchild semi
 ksc5021.pdf pdf_icon

KSC5021

October 2008 KSC5021 NPN Silicon Transistor High Voltage and High Reliability High Speed Switching tF = 0.1ms (Typ.) Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units 800 V VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 7 V VEBO Emitter-Base Voltage 5 A IC C

 ..2. Size:87K  inchange semiconductor
 ksc5021.pdf pdf_icon

KSC5021

Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5021 DESCRIPTION With TO-220C package High voltage and high reliability High speed switching Wide area of safe operation PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

 0.1. Size:72K  samsung
 ksc5021p.pdf pdf_icon

KSC5021

KSC5021 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING tf = 0.1 (Typ) WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 2 A 1.Base 2.Collec

 8.1. Size:58K  fairchild semi
 ksc5024.pdf pdf_icon

KSC5021

KSC5024 High Voltage and High Reliabilty High Speed Switching Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter- Base Voltage 7 V IC Collector Current (DC) 10 A ICP Collector Current (

MOSTRAR MÁS

Otros transistores... KSC388, KSC3953, KSC3953C, KSC3953D, KSC5020, KSC5020O, KSC5020R, KSC5020Y, BD677, KSC5021F, KSC5021O, KSC5021R, KSC5021Y, KSC5022, KSC5022O, KSC5022R, KSC5022Y