KSC5021 datasheet, аналоги, основные параметры
Наименование производителя: KSC5021 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 18 MHz
Ёмкость коллекторного перехода (Cc): 50 pf
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO220
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KSC5021 даташит
..1. Size:302K fairchild semi
ksc5021.pdf 
October 2008 KSC5021 NPN Silicon Transistor High Voltage and High Reliability High Speed Switching tF = 0.1ms (Typ.) Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units 800 V VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 7 V VEBO Emitter-Base Voltage 5 A IC C
..2. Size:87K inchange semiconductor
ksc5021.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5021 DESCRIPTION With TO-220C package High voltage and high reliability High speed switching Wide area of safe operation PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
0.1. Size:72K samsung
ksc5021p.pdf 
KSC5021 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING tf = 0.1 (Typ) WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 2 A 1.Base 2.Collec
8.1. Size:58K fairchild semi
ksc5024.pdf 
KSC5024 High Voltage and High Reliabilty High Speed Switching Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter- Base Voltage 7 V IC Collector Current (DC) 10 A ICP Collector Current (
8.2. Size:120K fairchild semi
ksc5026m.pdf 
January 2011 KSC5026M NPN Silicon Transistor Features High Voltage and High Reliability High Speed Switching Wide SOA TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (D
8.3. Size:53K fairchild semi
ksc5027.pdf 
KSC5027 High Voltage and High Reliability High Speed Switching Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Curre
8.4. Size:74K samsung
ksc5027f.pdf 
KSC5027F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING TO-220F WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage V CEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A Collector Dissipation (TC
8.5. Size:24K samsung
ksc5027.pdf 
KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A 1.Base 2.Collector 3.Emitter
8.6. Size:226K onsemi
ksc5026m.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.7. Size:235K onsemi
ksc5027.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.8. Size:215K inchange semiconductor
ksc5027f.pdf 
isc Silicon NPN Power Transistor KSC5027F DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUT
8.9. Size:88K inchange semiconductor
ksc5027.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5027 DESCRIPTION With TO-220C package High voltage and high reliability High speed switching Wide area of safe operation PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
Другие транзисторы: KSC388, KSC3953, KSC3953C, KSC3953D, KSC5020, KSC5020O, KSC5020R, KSC5020Y, BD677, KSC5021F, KSC5021O, KSC5021R, KSC5021Y, KSC5022, KSC5022O, KSC5022R, KSC5022Y
