KSC5022 Todos los transistores

 

KSC5022 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSC5022
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 500 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 18 MHz
   Capacitancia de salida (Cc): 80 pF
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3P
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KSC5022 Datasheet (PDF)

 8.1. Size:58K  fairchild semi
ksc5024.pdf pdf_icon

KSC5022

KSC5024High Voltage and High Reliabilty High Speed Switching Wide SOATO-3P11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 VVEBO Emitter- Base Voltage 7 VIC Collector Current (DC) 10 AICP Collector Current (

 8.2. Size:302K  fairchild semi
ksc5021.pdf pdf_icon

KSC5022

October 2008KSC5021NPN Silicon Transistor High Voltage and High Reliability High Speed Switching : tF = 0.1ms (Typ.) Wide SOATO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value Units 800 VVCBO Collector-Base Voltage 500 VVCEO Collector-Emitter Voltage 7 VVEBO Emitter-Base Voltage 5 AIC C

 8.3. Size:120K  fairchild semi
ksc5026m.pdf pdf_icon

KSC5022

January 2011KSC5026MNPN Silicon TransistorFeatures High Voltage and High Reliability High Speed Switching Wide SOATO-12611. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 1100 VVCEO Collector-Emitter Voltage 800 VVEBO Emitter-Base Voltage 7 VIC Collector Current (D

 8.4. Size:53K  fairchild semi
ksc5027.pdf pdf_icon

KSC5022

KSC5027High Voltage and High Reliability High Speed Switching Wide SOATO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Curre

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC414 | BC232B | 2N964 | 2SD468C | 2SC3443 | PUMD4 | 2SC1103A

 

 
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