KSD5012 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSD5012  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 8

Encapsulados: TO247

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KSD5012 datasheet

 8.1. Size:54K  samsung
 ksd5018.pdf pdf_icon

KSD5012

KSD5018 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR TO-220 BUILT-IN RESISTOR BETWEEN BASE AND EMITTER FOR MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 275 V Emitter Base Voltage VEBO 10 V Collector Current (DC) IC 4 A *Collector Current (Pulse) IC 6 A 1.Base 2.Collec

 8.2. Size:124K  inchange semiconductor
 ksd5017.pdf pdf_icon

KSD5012

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5017 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-E

 8.3. Size:129K  inchange semiconductor
 ksd5018.pdf pdf_icon

KSD5012

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors KSD5018 DESCRIPTION High Breakdown Voltage- V(BR)CEO= 275V(Min) Built-in Resistor Between Base and Emitter Wide Area of Safe Operation APPLICATIONS Designed for motor drive and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collecto

MOSTRAR MÁS

Otros transistores... KSD5002, KSD5003, KSD5004, KSD5005, KSD5006, KSD5007, KSD5010, KSD5011, 2N3904, KSD5013, KSD5014, KSD5015, KSD5016, KSD5017, KSD5018, KSD5041, KSD5041O