KSD5012 Datasheet. Specs and Replacement
Type Designator: KSD5012 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO247
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KSD5012 Substitution
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KSD5012 datasheet
KSD5018 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR TO-220 BUILT-IN RESISTOR BETWEEN BASE AND EMITTER FOR MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 275 V Emitter Base Voltage VEBO 10 V Collector Current (DC) IC 4 A *Collector Current (Pulse) IC 6 A 1.Base 2.Collec... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5017 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-E... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors KSD5018 DESCRIPTION High Breakdown Voltage- V(BR)CEO= 275V(Min) Built-in Resistor Between Base and Emitter Wide Area of Safe Operation APPLICATIONS Designed for motor drive and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collecto... See More ⇒
Detailed specifications: KSD5002, KSD5003, KSD5004, KSD5005, KSD5006, KSD5007, KSD5010, KSD5011, 2N3904, KSD5013, KSD5014, KSD5015, KSD5016, KSD5017, KSD5018, KSD5041, KSD5041O
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