KSD5057 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSD5057  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 8

Encapsulados: TO247

  📄📄 Copiar 

 Búsqueda de reemplazo de KSD5057

- Selecciónⓘ de transistores por parámetros

 

KSD5057 datasheet

 ..1. Size:132K  inchange semiconductor
ksd5057.pdf pdf_icon

KSD5057

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5057 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo

 8.1. Size:128K  inchange semiconductor
ksd5059.pdf pdf_icon

KSD5057

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5059 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collec

 8.2. Size:128K  inchange semiconductor
ksd5058.pdf pdf_icon

KSD5057

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5058 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collec

 8.3. Size:132K  inchange semiconductor
ksd5056.pdf pdf_icon

KSD5057

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5056 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo

Otros transistores... KSD5017, KSD5018, KSD5041, KSD5041O, KSD5041P, KSD5041Q, KSD5049, KSD5056, TIP122, KSD5058, KSD5059, KSD5060, KSD5061, KSD5062, KSD5064, KSD5065, KSD5066