KSD526R Todos los transistores

 

KSD526R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSD526R
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 90 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

KSD526R Datasheet (PDF)

 8.1. Size:177K  fairchild semi
 ksd526.pdf pdf_icon

KSD526R

April 2006KSD526NPN Epitaxial Silicon TransistorPower Amplifier Applications Complement to KSB596TO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 80 VVEBO Emitter-Base Voltage 5 VIC Collector Current 4 AIB Base Current 0.4 APC

 8.2. Size:260K  onsemi
 ksd526.pdf pdf_icon

KSD526R

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 3DA458 | 2SC3723 | BFP181

 

 
Back to Top

 


 
.