KSH122I Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSH122I  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 200 pF

Ganancia de corriente contínua (hFE): 10000

Encapsulados: TO252

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KSH122I datasheet

 8.1. Size:57K  fairchild semi
 ksh122.pdf pdf_icon

KSH122I

 8.2. Size:24K  samsung
 ksh122.pdf pdf_icon

KSH122I

KSH122 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT D-PAK APPLICATIONS High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, - I Suffix) 1 Electrically Similar to Popular TIP122 ABSOLUTE MAXIMUM RATINGS 1. Base 2. Collector 3. Emitter Characteristic Symbol Rating Un

 8.3. Size:256K  inchange semiconductor
 ksh122.pdf pdf_icon

KSH122I

isc Silicon NPN Power Transistor KSH122 DESCRIPTION High DC current gain Built-in a damper diode at E-C Electrically similar to popular TIP122 DPAK for surface mount applications Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi

MOSTRAR MÁS

Otros transistores... KSE801, KSE802, KSE803, KSH112, KSH112I, KSH117, KSH117I, KSH122, BC327, KSH127, KSH127I, KSH13003, KSH13003I, KSH200, KSH200I, KSH210, KSH210I