KSH122I Datasheet. Specs and Replacement

Type Designator: KSH122I  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO252

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KSH122I datasheet

 8.1. Size:57K  fairchild semi

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KSH122I

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 8.2. Size:24K  samsung

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KSH122I

KSH122 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT D-PAK APPLICATIONS High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, - I Suffix) 1 Electrically Similar to Popular TIP122 ABSOLUTE MAXIMUM RATINGS 1. Base 2. Collector 3. Emitter Characteristic Symbol Rating Un... See More ⇒

 8.3. Size:256K  inchange semiconductor

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KSH122I

isc Silicon NPN Power Transistor KSH122 DESCRIPTION High DC current gain Built-in a damper diode at E-C Electrically similar to popular TIP122 DPAK for surface mount applications Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi... See More ⇒

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Detailed specifications: KSE801, KSE802, KSE803, KSH112, KSH112I, KSH117, KSH117I, KSH122, BC327, KSH127, KSH127I, KSH13003, KSH13003I, KSH200, KSH200I, KSH210, KSH210I

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