KSH210I Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSH210I  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12.5 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 65 MHz

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO251

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KSH210I datasheet

 8.1. Size:52K  fairchild semi
 ksh210.pdf pdf_icon

KSH210I

KSH210 D-PAK for Surface Mount Applications High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VC

 8.2. Size:24K  samsung
 ksh210.pdf pdf_icon

KSH210I

KSH210 PNP EPITAXIAL SILICON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS High DC Current Gain D-PAK Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, - I Suffix) 1 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 1. Base 2. Collector 3. Emitter Collector Base Voltage VCBO - 40

 8.3. Size:168K  onsemi
 ksh210.pdf pdf_icon

KSH210I

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:253K  inchange semiconductor
 ksh210.pdf pdf_icon

KSH210I

isc Silicon PNP Power Transistor KSH210 DESCRIPTION High DC current gain Built-in a damper diode at E-C Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) DPAK for surface mount applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier ABSO

MOSTRAR MÁS

Otros transistores... KSH122I, KSH127, KSH127I, KSH13003, KSH13003I, KSH200, KSH200I, KSH210, B772, KSH29, KSH2955, KSH2955I, KSH29C, KSH29CI, KSH29I, KSH30, KSH3055