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KSH210I . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSH210I
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 12.5 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 65 MHz
   Capacitancia de salida (Cc): 80 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de transistor bipolar KSH210I

 

KSH210I Datasheet (PDF)

 8.1. Size:52K  fairchild semi
 ksh210.pdf

KSH210I KSH210I

KSH210D-PAK for Surface Mount Applications High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK111.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VC

 8.2. Size:24K  samsung
 ksh210.pdf

KSH210I KSH210I

KSH210 PNP EPITAXIAL SILICON TRANSISTORD-PACK FOR SURFACE MOUNT APPLICATIONS High DC Current Gain D-PAK Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, - I Suffix)1ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit1. Base 2. Collector 3. Emitter Collector Base Voltage VCBO - 40

 8.3. Size:168K  onsemi
 ksh210.pdf

KSH210I KSH210I

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:253K  inchange semiconductor
 ksh210.pdf

KSH210I KSH210I

isc Silicon PNP Power Transistor KSH210DESCRIPTIONHigh DC current gainBuilt-in a damper diode at E-CLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)DPAK for surface mount applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifierABSO

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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