KSH210I Datasheet and Replacement
Type Designator: KSH210I
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO251
KSH210I Transistor Equivalent Substitute - Cross-Reference Search
KSH210I Datasheet (PDF)
ksh210.pdf
KSH210 D-PAK for Surface Mount Applications High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VC... See More ⇒
ksh210.pdf
KSH210 PNP EPITAXIAL SILICON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS High DC Current Gain D-PAK Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, - I Suffix) 1 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 1. Base 2. Collector 3. Emitter Collector Base Voltage VCBO - 40... See More ⇒
ksh210.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
ksh210.pdf
isc Silicon PNP Power Transistor KSH210 DESCRIPTION High DC current gain Built-in a damper diode at E-C Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) DPAK for surface mount applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier ABSO... See More ⇒
Datasheet: KSH122I , KSH127 , KSH127I , KSH13003 , KSH13003I , KSH200 , KSH200I , KSH210 , B772 , KSH29 , KSH2955 , KSH2955I , KSH29C , KSH29CI , KSH29I , KSH30 , KSH3055 .
Keywords - KSH210I transistor datasheet
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