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KSH210I Datasheet and Replacement


   Type Designator: KSH210I
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 65 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO251

 KSH210I Transistor Equivalent Substitute - Cross-Reference Search

   

KSH210I Datasheet (PDF)

 8.1. Size:52K  fairchild semi
ksh210.pdf pdf_icon

KSH210I

KSH210 D-PAK for Surface Mount Applications High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VC... See More ⇒

 8.2. Size:24K  samsung
ksh210.pdf pdf_icon

KSH210I

KSH210 PNP EPITAXIAL SILICON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS High DC Current Gain D-PAK Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, - I Suffix) 1 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 1. Base 2. Collector 3. Emitter Collector Base Voltage VCBO - 40... See More ⇒

 8.3. Size:168K  onsemi
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KSH210I

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.4. Size:253K  inchange semiconductor
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KSH210I

isc Silicon PNP Power Transistor KSH210 DESCRIPTION High DC current gain Built-in a damper diode at E-C Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) DPAK for surface mount applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier ABSO... See More ⇒

Datasheet: KSH122I , KSH127 , KSH127I , KSH13003 , KSH13003I , KSH200 , KSH200I , KSH210 , B772 , KSH29 , KSH2955 , KSH2955I , KSH29C , KSH29CI , KSH29I , KSH30 , KSH3055 .

Keywords - KSH210I transistor datasheet

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