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KSH44H11I . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSH44H11I
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 130 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de transistor bipolar KSH44H11I

 

KSH44H11I Datasheet (PDF)

 ..1. Size:42K  fairchild semi
ksh44h11i.pdf

KSH44H11I KSH44H11I

KSH44H11General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11 Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular KSE44H1.Base 2.Collector 3.Emitter Fast Switching Speeds Low Collector Emitter Saturation Vo

 ..2. Size:208K  inchange semiconductor
ksh44h11i.pdf

KSH44H11I KSH44H11I

INCHANGE Semiconductorisc Silicon NPN Power Transistor KSH44H11IDESCRIPTIONStraight lead(IPAK,Isuffix)Electrically similar to popular KSE44HFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifierConvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 6.1. Size:43K  samsung
ksh44h11.pdf

KSH44H11I KSH44H11I

KSH44H11 NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE POWER AND SWITCHINGD-PAKSUCH AS OUTPUT OR DRIVER STAGES INAPPLICATIONS D-PACK FOR SURFACEMOUNT APPLICATIONS Load Formed for Surface Mount Application(No Suffix) Straight Lead (I.PACK, - I Suffix) 1 Electrically Similar to Popular KSE44H Fast Switching Speeds Low Collector Emitter Saturation Voltage1

 6.2. Size:256K  inchange semiconductor
ksh44h11.pdf

KSH44H11I KSH44H11I

isc Silicon NPN Power Transistor KSE44H11DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 60(Min)@ (V = 1V, I = 2A)FE CE CLow Saturation Voltage-: V = 1.0V(Max)@ (I = 8A, I = 0.4A)CE(sat) C BComplement to Type KSE45H11Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

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