KSH44H11I Todos los transistores

 

KSH44H11I Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSH44H11I
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 130 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de transistor bipolar KSH44H11I

 

Principales características: KSH44H11I

 ..1. Size:42K  fairchild semi
 ksh44h11i.pdf pdf_icon

KSH44H11I

KSH44H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular KSE44H 1.Base 2.Collector 3.Emitter Fast Switching Speeds Low Collector Emitter Saturation Vo

 ..2. Size:208K  inchange semiconductor
 ksh44h11i.pdf pdf_icon

KSH44H11I

INCHANGE Semiconductor isc Silicon NPN Power Transistor KSH44H11I DESCRIPTION Straight lead(IPAK, I suffix) Electrically similar to popular KSE44H Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifier Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 6.1. Size:43K  samsung
 ksh44h11.pdf pdf_icon

KSH44H11I

KSH44H11 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER AND SWITCHING D-PAK SUCH AS OUTPUT OR DRIVER STAGES IN APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS Load Formed for Surface Mount Application(No Suffix) Straight Lead (I.PACK, - I Suffix) 1 Electrically Similar to Popular KSE44H Fast Switching Speeds Low Collector Emitter Saturation Voltage 1

 6.2. Size:256K  inchange semiconductor
 ksh44h11.pdf pdf_icon

KSH44H11I

isc Silicon NPN Power Transistor KSE44H11 DESCRIPTION Collector-Emitter Breakdown Voltage V = 80V(Min) (BR)CEO High DC Current Gain h = 60(Min)@ (V = 1V, I = 2A) FE CE C Low Saturation Voltage- V = 1.0V(Max)@ (I = 8A, I = 0.4A) CE(sat) C B Complement to Type KSE45H11 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

MOSTRAR MÁS

Otros transistores... KSH350I , KSH41 , KSH41C , KSH41CI , KSH42 , KSH42C , KSH42CI , KSH44H11 , 2SA1015 , KSH45H11 , KSH45H11I , KSH47 , KSH47I , KSH50 , KSH50I , KSP05 , KSP06 .

 

 
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