KSH45H11 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSH45H11 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 230 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO252
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KSH45H11 datasheet
ksh45h11.pdf
KSH45H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular KSE45H 1.Base 2.Collector 3.Emitter Fast Switching Speeds Low Collector Emitter Saturation Vo
ksh45h11.pdf
KSH45H11 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER AND SWITCHING D-PAK SUCH AS OUTPUT OR DRIVER STAGES IN APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS Load Formed for Surface Mount Application(No Suffix) Straight Lead (I.PACK, - I Suffix) 1 Electrically Similar to Popular KSE45H Fast Switching Speeds Low Collector Emitter Saturation Voltage 1. Base 2. Colle
ksh45h11.pdf
isc Silicon PNP Power Transistor KSE45H11 DESCRIPTION Collector-Emitter Breakdown Voltage V = -80V(Min) (BR)CEO High DC Current Gain h = 60(Min)@ (V = -1V, I = -2A) FE CE C Low Saturation Voltage- V = -1.0V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B Complement to Type KSE44H11 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO
Otros transistores... KSH41, KSH41C, KSH41CI, KSH42, KSH42C, KSH42CI, KSH44H11, KSH44H11I, BC556, KSH45H11I, KSH47, KSH47I, KSH50, KSH50I, KSP05, KSP06, KSP10
Parámetros del transistor bipolar y su interrelación.
History: ZTX214M | KSH45H11I
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