KSH45H11
Datasheet, Equivalent, Cross Reference Search
Type Designator: KSH45H11
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 8
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 50
MHz
Collector Capacitance (Cc): 230
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
TO252
KSH45H11
Transistor Equivalent Substitute - Cross-Reference Search
KSH45H11
Datasheet (PDF)
..1. Size:42K fairchild semi
ksh45h11.pdf
KSH45H11General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11 Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular KSE45H1.Base 2.Collector 3.Emitter Fast Switching Speeds Low Collector Emitter Saturation Vo
..2. Size:43K samsung
ksh45h11.pdf
KSH45H11 PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE POWER AND SWITCHINGD-PAKSUCH AS OUTPUT OR DRIVER STAGES INAPPLICATIONS D-PACK FOR SURFACEMOUNT APPLICATIONS Load Formed for Surface Mount Application(No Suffix) Straight Lead (I.PACK,- I Suffix)1 Electrically Similar to Popular KSE45H Fast Switching Speeds Low Collector Emitter Saturation Voltage1. Base 2. Colle
..3. Size:258K inchange semiconductor
ksh45h11.pdf
isc Silicon PNP Power Transistor KSE45H11DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -80V(Min)(BR)CEOHigh DC Current Gain: h = 60(Min)@ (V = -1V, I = -2A)FE CE CLow Saturation Voltage-: V = -1.0V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BComplement to Type KSE44H11Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO
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