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KTB778 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KTB778
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-emisor (Vce): 120 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 55
   Paquete / Cubierta: TO3P
 

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KTB778 Datasheet (PDF)

 ..1. Size:53K  kec
 ktb778.pdf pdf_icon

KTB778

SEMICONDUCTOR KTB778TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION.DIM MILLIMETERSFEATURES A 16.30 MAXA C_+B 12.00 0.30RComplementary to KTD998._+C 5.50 0.20WWU D 1.20 MAXRecommended for 4550W Audio Frequency E 8.00VF 5.00Amplifier Output Stage._+G 17.00 0.30H 0.60+0.15/-0.10I 2.50_+J 20.0 0.1IM

 ..2. Size:225K  inchange semiconductor
 ktb778.pdf pdf_icon

KTB778

isc Silicon PNP Power Transistor KTB778DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type KTD998Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOL

 9.1. Size:396K  kec
 ktb772.pdf pdf_icon

KTB778

SEMICONDUCTOR KTB772TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY POWER AMPLIFIER ALOW SPEED SWITCHING BDCEFEATURESFComplementary to KTD882.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -40 VCollector-Base Voltage_+F 11.0 0.3G 2.9 MAXVCEO -30 V

Otros transistores... KTB1368 , KTB1369 , KTB1370 , KTB1423 , KTB1424 , KTB2955 , KTB595 , KTB688 , 2N2222 , KTB817 , KTB988 , KTB989 , KTC1001 , KTC1003 , KTC1006 , KTC1008 , KTC1020 .

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