KTB778 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTB778

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-emisor (Vce): 120 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 55

Encapsulados: TO3P

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KTB778 datasheet

 ..1. Size:53K  kec
 ktb778.pdf pdf_icon

KTB778

SEMICONDUCTOR KTB778 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. DIM MILLIMETERS FEATURES A 16.30 MAX A C _ + B 12.00 0.30 R Complementary to KTD998. _ + C 5.50 0.20 W W U D 1.20 MAX Recommended for 45 50W Audio Frequency E 8.00 V F 5.00 Amplifier Output Stage. _ + G 17.00 0.30 H 0.60+0.15/-0.10 I 2.50 _ + J 20.0 0.1 I M

 ..2. Size:225K  inchange semiconductor
 ktb778.pdf pdf_icon

KTB778

isc Silicon PNP Power Transistor KTB778 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type KTD998 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOL

 9.1. Size:396K  kec
 ktb772.pdf pdf_icon

KTB778

SEMICONDUCTOR KTB772 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER A LOW SPEED SWITCHING B D C E FEATURES F Complementary to KTD882. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO -40 V Collector-Base Voltage _ + F 11.0 0.3 G 2.9 MAX VCEO -30 V

Otros transistores... KTB1368, KTB1369, KTB1370, KTB1423, KTB1424, KTB2955, KTB595, KTB688, C1815, KTB817, KTB988, KTB989, KTC1001, KTC1003, KTC1006, KTC1008, KTC1020