All Transistors. KTB778 Datasheet

 

KTB778 Datasheet, Equivalent, Cross Reference Search


   Type Designator: KTB778
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: TO3P

 KTB778 Transistor Equivalent Substitute - Cross-Reference Search

   

KTB778 Datasheet (PDF)

 ..1. Size:53K  kec
ktb778.pdf

KTB778 KTB778

SEMICONDUCTOR KTB778TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION.DIM MILLIMETERSFEATURES A 16.30 MAXA C_+B 12.00 0.30RComplementary to KTD998._+C 5.50 0.20WWU D 1.20 MAXRecommended for 4550W Audio Frequency E 8.00VF 5.00Amplifier Output Stage._+G 17.00 0.30H 0.60+0.15/-0.10I 2.50_+J 20.0 0.1IM

 ..2. Size:225K  inchange semiconductor
ktb778.pdf

KTB778 KTB778

isc Silicon PNP Power Transistor KTB778DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type KTD998Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOL

 9.1. Size:396K  kec
ktb772.pdf

KTB778 KTB778

SEMICONDUCTOR KTB772TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY POWER AMPLIFIER ALOW SPEED SWITCHING BDCEFEATURESFComplementary to KTD882.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -40 VCollector-Base Voltage_+F 11.0 0.3G 2.9 MAXVCEO -30 V

Datasheet: KTB1368 , KTB1369 , KTB1370 , KTB1423 , KTB1424 , KTB2955 , KTB595 , KTB688 , TIP3055 , KTB817 , KTB988 , KTB989 , KTC1001 , KTC1003 , KTC1006 , KTC1008 , KTC1020 .

 

 
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