All Transistors. KTB778 Datasheet

 

KTB778 Datasheet and Replacement


   Type Designator: KTB778
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: TO3P
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KTB778 Datasheet (PDF)

 ..1. Size:53K  kec
 ktb778.pdf pdf_icon

KTB778

SEMICONDUCTOR KTB778TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION.DIM MILLIMETERSFEATURES A 16.30 MAXA C_+B 12.00 0.30RComplementary to KTD998._+C 5.50 0.20WWU D 1.20 MAXRecommended for 4550W Audio Frequency E 8.00VF 5.00Amplifier Output Stage._+G 17.00 0.30H 0.60+0.15/-0.10I 2.50_+J 20.0 0.1IM

 ..2. Size:225K  inchange semiconductor
 ktb778.pdf pdf_icon

KTB778

isc Silicon PNP Power Transistor KTB778DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type KTD998Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOL

 9.1. Size:396K  kec
 ktb772.pdf pdf_icon

KTB778

SEMICONDUCTOR KTB772TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY POWER AMPLIFIER ALOW SPEED SWITCHING BDCEFEATURESFComplementary to KTD882.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -40 VCollector-Base Voltage_+F 11.0 0.3G 2.9 MAXVCEO -30 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - KTB778 transistor datasheet

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