KTB778 Specs and Replacement
Type Designator: KTB778
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO3P
KTB778 Transistor Equivalent Substitute - Cross-Reference Search
KTB778 detailed specifications
ktb778.pdf
SEMICONDUCTOR KTB778 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. DIM MILLIMETERS FEATURES A 16.30 MAX A C _ + B 12.00 0.30 R Complementary to KTD998. _ + C 5.50 0.20 W W U D 1.20 MAX Recommended for 45 50W Audio Frequency E 8.00 V F 5.00 Amplifier Output Stage. _ + G 17.00 0.30 H 0.60+0.15/-0.10 I 2.50 _ + J 20.0 0.1 I M ... See More ⇒
ktb778.pdf
isc Silicon PNP Power Transistor KTB778 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type KTD998 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOL... See More ⇒
ktb772.pdf
SEMICONDUCTOR KTB772 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER A LOW SPEED SWITCHING B D C E FEATURES F Complementary to KTD882. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO -40 V Collector-Base Voltage _ + F 11.0 0.3 G 2.9 MAX VCEO -30 V ... See More ⇒
Detailed specifications: KTB1368 , KTB1369 , KTB1370 , KTB1423 , KTB1424 , KTB2955 , KTB595 , KTB688 , C1815 , KTB817 , KTB988 , KTB989 , KTC1001 , KTC1003 , KTC1006 , KTC1008 , KTC1020 .
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