2N42. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2N42 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N42

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 30 V

Corriente del colector DC máxima (Ic): 0.008 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 9

Encapsulados: TO22

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2N42 datasheet

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4264/D General Purpose Transistor NPN Silicon 2N4264 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 15 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector Current Cont

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4264/D General Purpose Transistors NPN Silicon 2N4264 2N4265 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N4264 2N4265 Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 15 12 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collec

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

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TM 2N4237 Central 2N4238 Semiconductor Corp. 2N4239 NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4237, 2N4238, and 2N4239 are Silicon NPN Transistors, in a hermetically sealed metal case designed for power amplifier, power driver and switching power supply applications. JEDEC TO-39 CASE MAXIMUM RATINGS (TC=25 C unless otherwise noted) SYMBOL 2N4237 2N4238 2N

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

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"2N4236X" 2N4236X Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed p

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1.02 0.10 R0.31 0.51 0.10 (0.04 0.004) (0.012) (0.02 0.004) See 4 Package 3 Variant Table 2 1 1.91 0.10 (0.075 0.004) 1.40 0.31 rad. (0.055) (0.012) 3.05 0.13 max. (0.12 0.005) 2.54 0.13 (0.10 0.005) 0.76 0.15 (0.03 0.006) R0.56 (0.022)

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Boca Semiconductor corp. bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com

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Boca Semicondcutor Corp. bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com

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A Boca Semiconductor Corp. http //www.bocasemi.com A http //www.bocasemi.com A http //www.bocasemi.com A http //www.bocasemi.com

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A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

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Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTORS 2N4234, 2N4235 2N4236 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N4234 2N4235 2N4236 UNIT VCEO Collector Emitter Voltage 40 60 80 V VCBO Collector Base Voltage 40 60 80 V VEBO Emitter Base Voltage 7.0 V IB Base Curr

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Databook.fxp 1/13/99 2 09 PM Page B-10 B-10 01/99 2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Mixers Reverse Gate Source & Reverse Gate Drain Voltage 30 V Oscillators Continuous Forward Gate Current 10 mA VHF Amplifiers Continuous Device Power Dissipation 300 mW Power Derating

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN 2N4261UBC * JANTX JANTXV * Avail

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Data Sheet No. 2N4261 Generic Part Number Type 2N4261 2N4261 Geometry 0014 Polarity PNP REF MIL-PRF-19500/511 Qual Level JAN - JANS Features Fast switching small signal silicon transistor. Housed in a TO-72 case. Also available in chip form using the 0014 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/511 which Semicoa meets in all cases.

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isc Silicon NPN Power Transistor 2N4231 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

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isc Silicon NPN Power Transistor 2N4232A DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

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isc Silicon NPN Power Transistor 2N4233A DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

Otros transistores... 2N414C , 2N415 , 2N4150 , 2N415A , 2N416 , 2N417 , 2N418 , 2N419 , D965 , 2N420 , 2N4207 , 2N4208 , 2N4209 , 2N420A , 2N421 , 2N4210 , 2N4211 .