Биполярный транзистор 2N42
Даташит. Аналоги
Наименование производителя: 2N42
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.05
W
Макcимально допустимое напряжение коллектор-база (Ucb): 30
V
Макcимальный постоянный ток коллектора (Ic): 0.008
A
Предельная температура PN-перехода (Tj): 75
°C
Ёмкость коллекторного перехода (Cc): 20
pf
Статический коэффициент передачи тока (hfe): 9
Корпус транзистора:
TO22
-
подбор ⓘ биполярного транзистора по параметрам
2N42
Datasheet (PDF)
0.7. Size:169K motorola
2n4264.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4264/DGeneral Purpose TransistorNPN Silicon2N4264COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 15 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 6.0 VdcCollector Current Cont
0.8. Size:264K motorola
2n4264 2n4265.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4264/DGeneral Purpose TransistorsNPN Silicon2N42642N4265COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol 2N4264 2N4265 UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 15 12 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 6.0 VdcCollec
0.9. Size:65K central
2n4296 2n4298 2n4299.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
0.10. Size:144K central
2n4237 2n4238 2n4239.pdf 
TM2N4237Central2N4238Semiconductor Corp.2N4239NPN SILICON TRANSISTORDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N4237,2N4238, and 2N4239 are Silicon NPN Transistors,in a hermetically sealed metal case designed forpower amplifier, power driver and switching powersupply applications. JEDEC TO-39 CASEMAXIMUM RATINGS: (TC=25C unless otherwise noted)SYMBOL 2N4237 2N4238 2N
0.11. Size:63K central
2n4248 2n4249 2n4250.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
0.12. Size:87K central
2n4208 2n4209.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
0.14. Size:9K semelab
2n4236x.pdf 
"2N4236X"2N4236XDimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed p
0.15. Size:1004K semelab
2n4209c1a.pdf 
1.02 0.10R0.310.51 0.10 (0.04 0.004)(0.012)(0.02 0.004)See4Package3VariantTable2 11.91 0.10(0.075 0.004)1.400.31rad. (0.055)(0.012)3.05 0.13max.(0.12 0.005)2.54 0.13(0.10 0.005)0.76 0.15(0.03 0.006)R0.56(0.022)
0.16. Size:1004K semelab
2n4209c1b.pdf 
1.02 0.10R0.310.51 0.10 (0.04 0.004)(0.012)(0.02 0.004)See4Package3VariantTable2 11.91 0.10(0.075 0.004)1.400.31rad. (0.055)(0.012)3.05 0.13max.(0.12 0.005)2.54 0.13(0.10 0.005)0.76 0.15(0.03 0.006)R0.56(0.022)
0.17. Size:196K bocasemi
2n4234 2n4235 2n4236.pdf 
Boca Semiconductor corp.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com
0.18. Size:174K bocasemi
2n4237 2n4238 2n4239.pdf 
Boca Semicondcutor Corp.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com
0.20. Size:196K bocasemi
2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf 
ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
0.21. Size:62K cdil
2n4234 5 6.pdf 
Continental Device India LimitedAn ISO/TS 16949 and ISO 9001 Certified CompanyPNP SILICON PLANAR TRANSISTORS 2N4234, 2N42352N4236 TO-39 Metal Can PackageGeneral Purpose TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N4234 2N4235 2N4236 UNITVCEOCollector Emitter Voltage 40 60 80 VVCBOCollector Base Voltage 40 60 80 VVEBOEmitter Base Voltage 7.0 VIBBase Curr
0.22. Size:93K interfet
2n4220-a 2n4221-a 2n4222-a.pdf 
Databook.fxp 1/13/99 2:09 PM Page B-10B-10 01/992N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222AN-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C MixersReverse Gate Source & Reverse Gate Drain Voltage 30 V OscillatorsContinuous Forward Gate Current 10 mA VHF AmplifiersContinuous Device Power Dissipation 300 mWPower Derating
0.23. Size:191K microsemi
2n4261ubc.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN2N4261UBC * JANTXJANTXV* Avail
0.24. Size:47K semicoa
2n4261.pdf 
Data Sheet No. 2N4261Generic Part Number:Type 2N42612N4261Geometry 0014Polarity PNPREF: MIL-PRF-19500/511Qual Level: JAN - JANSFeatures: Fast switching small signal silicontransistor. Housed in a TO-72 case. Also available in chip form usingthe 0014 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/511 whichSemicoa meets in all cases.
0.27. Size:186K inchange semiconductor
2n4298.pdf 
isc Silicon NPN Power Transistor 2N4298DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25
0.28. Size:188K inchange semiconductor
2n4240.pdf 
isc Silicon NPN Power Transistor 2N4240DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25
0.29. Size:184K inchange semiconductor
2n4231.pdf 
isc Silicon NPN Power Transistor 2N4231DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
0.30. Size:170K inchange semiconductor
2n4273.pdf 
isc Silicon NPN Power Transistor 2N4273DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25
0.31. Size:188K inchange semiconductor
2n4232a.pdf 
isc Silicon NPN Power Transistor 2N4232ADESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
0.32. Size:188K inchange semiconductor
2n4233a.pdf 
isc Silicon NPN Power Transistor 2N4233ADESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, BC546
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
History: 2N3789
| BUL128DB
| BD702
| BUX52
| 2N5024
| S9012LT
