2N42 Datasheet and Replacement

   Type Designator: 2N42
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector Current |Ic max|: 0.008 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 9
   Noise Figure, dB: -
   Package: TO22

2N42 Substitution

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2N42 Datasheet (PDF)

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4264/DGeneral Purpose TransistorNPN Silicon2N4264COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 15 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 6.0 VdcCollector Current Cont

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4264/DGeneral Purpose TransistorsNPN Silicon2N42642N4265COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol 2N4264 2N4265 UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 15 12 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 6.0 VdcCollec

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TM2N4237Central2N4238Semiconductor Corp.2N4239NPN SILICON TRANSISTORDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N4237,2N4238, and 2N4239 are Silicon NPN Transistors,in a hermetically sealed metal case designed forpower amplifier, power driver and switching powersupply applications. JEDEC TO-39 CASEMAXIMUM RATINGS: (TC=25C unless otherwise noted)SYMBOL 2N4237 2N4238 2N

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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

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"2N4236X"2N4236XDimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed p

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1.02 0.10R0.310.51 0.10 (0.04 0.004)(0.012)(0.02 0.004)See4Package3VariantTable2 11.91 0.10(0.075 0.004)1.400.31rad. (0.055)(0.012)3.05 0.13max.(0.12 0.005)2.54 0.13(0.10 0.005)0.76 0.15(0.03 0.006)R0.56(0.022)

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Boca Semiconductor corp.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com

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Boca Semicondcutor Corp.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com

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ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com

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Continental Device India LimitedAn ISO/TS 16949 and ISO 9001 Certified CompanyPNP SILICON PLANAR TRANSISTORS 2N4234, 2N42352N4236 TO-39 Metal Can PackageGeneral Purpose TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N4234 2N4235 2N4236 UNITVCEOCollector Emitter Voltage 40 60 80 VVCBOCollector Base Voltage 40 60 80 VVEBOEmitter Base Voltage 7.0 VIBBase Curr

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Databook.fxp 1/13/99 2:09 PM Page B-10B-10 01/992N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222AN-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C MixersReverse Gate Source & Reverse Gate Drain Voltage 30 V OscillatorsContinuous Forward Gate Current 10 mA VHF AmplifiersContinuous Device Power Dissipation 300 mWPower Derating

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN2N4261UBC * JANTXJANTXV* Avail

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Data Sheet No. 2N4261Generic Part Number:Type 2N42612N4261Geometry 0014Polarity PNPREF: MIL-PRF-19500/511Qual Level: JAN - JANSFeatures: Fast switching small signal silicontransistor. Housed in a TO-72 case. Also available in chip form usingthe 0014 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/511 whichSemicoa meets in all cases.

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isc Silicon NPN Power Transistor 2N4298DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25

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isc Silicon NPN Power Transistor 2N4240DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25

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isc Silicon NPN Power Transistor 2N4231DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

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isc Silicon NPN Power Transistor 2N4273DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25

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2n4232a.pdf pdf_icon

isc Silicon NPN Power Transistor 2N4232ADESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

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isc Silicon NPN Power Transistor 2N4233ADESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: 2N414C , 2N415 , 2N4150 , 2N415A , 2N416 , 2N417 , 2N418 , 2N419 , NJW0281G , 2N420 , 2N4207 , 2N4208 , 2N4209 , 2N420A , 2N421 , 2N4210 , 2N4211 .