2N42 Datasheet, Equivalent, Cross Reference Search

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4264/DGeneral Purpose TransistorNPN Silicon2N4264COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 15 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 6.0 VdcCollector Current Cont

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4264/DGeneral Purpose TransistorsNPN Silicon2N42642N4265COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol 2N4264 2N4265 UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 15 12 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 6.0 VdcCollec

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TM2N4237Central2N4238Semiconductor Corp.2N4239NPN SILICON TRANSISTORDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N4237,2N4238, and 2N4239 are Silicon NPN Transistors,in a hermetically sealed metal case designed forpower amplifier, power driver and switching powersupply applications. JEDEC TO-39 CASEMAXIMUM RATINGS: (TC=25C unless otherwise noted)SYMBOL 2N4237 2N4238 2N

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

"2N4236X"2N4236XDimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed p

1.02 0.10R0.310.51 0.10 (0.04 0.004)(0.012)(0.02 0.004)See4Package3VariantTable2 11.91 0.10(0.075 0.004)1.400.31rad. (0.055)(0.012)3.05 0.13max.(0.12 0.005)2.54 0.13(0.10 0.005)0.76 0.15(0.03 0.006)R0.56(0.022)

1.02 0.10R0.310.51 0.10 (0.04 0.004)(0.012)(0.02 0.004)See4Package3VariantTable2 11.91 0.10(0.075 0.004)1.400.31rad. (0.055)(0.012)3.05 0.13max.(0.12 0.005)2.54 0.13(0.10 0.005)0.76 0.15(0.03 0.006)R0.56(0.022)

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ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com

Continental Device India LimitedAn ISO/TS 16949 and ISO 9001 Certified CompanyPNP SILICON PLANAR TRANSISTORS 2N4234, 2N42352N4236 TO-39 Metal Can PackageGeneral Purpose TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N4234 2N4235 2N4236 UNITVCEOCollector Emitter Voltage 40 60 80 VVCBOCollector Base Voltage 40 60 80 VVEBOEmitter Base Voltage 7.0 VIBBase Curr

Databook.fxp 1/13/99 2:09 PM Page B-10B-10 01/992N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222AN-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C MixersReverse Gate Source & Reverse Gate Drain Voltage 30 V OscillatorsContinuous Forward Gate Current 10 mA VHF AmplifiersContinuous Device Power Dissipation 300 mWPower Derating

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN2N4261UBC * JANTXJANTXV* Avail

Data Sheet No. 2N4261Generic Part Number:Type 2N42612N4261Geometry 0014Polarity PNPREF: MIL-PRF-19500/511Qual Level: JAN - JANSFeatures: Fast switching small signal silicontransistor. Housed in a TO-72 case. Also available in chip form usingthe 0014 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/511 whichSemicoa meets in all cases.

isc Silicon NPN Power Transistor 2N4298DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2N4240DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2N4231DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2N4273DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2N4232ADESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2N4233ADESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE