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MA200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MA200
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 105 V
   Tensión colector-emisor (Vce): 105 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.5 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO5
 

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MA200 Datasheet (PDF)

 0.1. Size:303K  fairchild semi
 fdma2002nz.pdf pdf_icon

MA200

May 20 0ttmtmtmFDMA2002NZDual N-Channel PowerTrench MOSFETGeneral Description Features 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V This device is designed specifically as a single package RDS(ON) = 140 m @ VGS = 3.0 V solution for dual switching requirements in cellular RDS(ON) = 163 m @ VGS = 2.5 V handset and other ultra-portable applications. It fea

 0.2. Size:432K  onsemi
 fdma2002nz.pdf pdf_icon

MA200

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... MA1702 , MA1703 , MA1704 , MA1705 , MA1706 , MA1707 , MA1708 , MA2 , BD777 , MA201 , MA202 , MA203 , MA204 , MA2043 , MA205 , MA206 , MA240 .

History: 2SA1013T | ESM5008

 

 
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