MA200 Datasheet, Equivalent, Cross Reference Search
Type Designator: MA200
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 105 V
Maximum Collector-Emitter Voltage |Vce|: 105 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
MA200 Transistor Equivalent Substitute - Cross-Reference Search
MA200 Datasheet (PDF)
fdma2002nz.pdf
May 20 0ttmtmtmFDMA2002NZDual N-Channel PowerTrench MOSFETGeneral Description Features 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V This device is designed specifically as a single package RDS(ON) = 140 m @ VGS = 3.0 V solution for dual switching requirements in cellular RDS(ON) = 163 m @ VGS = 2.5 V handset and other ultra-portable applications. It fea
fdma2002nz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: NMT2907
