MA200 Specs and Replacement
Type Designator: MA200
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 105 V
Maximum Collector-Emitter Voltage |Vce|: 105 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO5
MA200 Substitution
- BJT ⓘ Cross-Reference Search
MA200 datasheet
May 20 0 t tm tm tm FDMA2002NZ Dual N-Channel PowerTrench MOSFET General Description Features 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V This device is designed specifically as a single package RDS(ON) = 140 m @ VGS = 3.0 V solution for dual switching requirements in cellular RDS(ON) = 163 m @ VGS = 2.5 V handset and other ultra-portable applications. It fea... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: MA1702, MA1703, MA1704, MA1705, MA1706, MA1707, MA1708, MA2, BD333, MA201, MA202, MA203, MA204, MA2043, MA205, MA206, MA240
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