MJ12002. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

MJ12002 datasheet

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mj12002.pdf pdf_icon

isc Silicon NPN Power Transistor MJ12002 DESCRIPTION High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Base Voltage 1500

8.1. Size:208K inchange semiconductor
mj12004.pdf pdf_icon

isc Silicon NPN Power Transistor MJ12004 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

8.2. Size:205K inchange semiconductor
mj12003.pdf pdf_icon

isc Silicon NPN Power Transistor MJ12003 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

8.3. Size:205K inchange semiconductor
mj12005.pdf pdf_icon

isc Silicon NPN Power Transistor MJ12005 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

Otros transistores... MJ11022 , MJ11028 , MJ11029 , MJ11030 , MJ11031 , MJ11032 , MJ11033 , MJ1200 , 2SB817 , MJ12003 , MJ12004 , MJ12005 , MJ1201 , MJ12010 , MJ12020 , MJ12021 , MJ12022 .