MJ12002 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MJ12002 Specs and Replacement

Type Designator: MJ12002

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Emitter Voltage |Vce|: 1500 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

MJ12002 Substitution

- BJT ⓘ Cross-Reference Search

MJ12002 datasheet

..1. Size:204K inchange semiconductor

mj12002.pdf pdf_icon

isc Silicon NPN Power Transistor MJ12002 DESCRIPTION High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Base Voltage 1500... See More ⇒

8.1. Size:208K inchange semiconductor

mj12004.pdf pdf_icon

isc Silicon NPN Power Transistor MJ12004 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

8.2. Size:205K inchange semiconductor

mj12003.pdf pdf_icon

isc Silicon NPN Power Transistor MJ12003 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒

8.3. Size:205K inchange semiconductor

mj12005.pdf pdf_icon

isc Silicon NPN Power Transistor MJ12005 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒

Detailed specifications: MJ11022, MJ11028, MJ11029, MJ11030, MJ11031, MJ11032, MJ11033, MJ1200, 2SB817, MJ12003, MJ12004, MJ12005, MJ1201, MJ12010, MJ12020, MJ12021, MJ12022