MJ12005 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ12005 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 750 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 5
Encapsulados: TO3
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MJ12005 datasheet
mj12005.pdf
isc Silicon NPN Power Transistor MJ12005 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
mj12004.pdf
isc Silicon NPN Power Transistor MJ12004 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
mj12003.pdf
isc Silicon NPN Power Transistor MJ12003 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
mj12002.pdf
isc Silicon NPN Power Transistor MJ12002 DESCRIPTION High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Base Voltage 1500
Otros transistores... MJ11030, MJ11031, MJ11032, MJ11033, MJ1200, MJ12002, MJ12003, MJ12004, D880, MJ1201, MJ12010, MJ12020, MJ12021, MJ12022, MJ13014, MJ13015, MJ13070
Parámetros del transistor bipolar y su interrelación.
History: KRC830E | BUT21B | 2SD1363R | KRA752F | 2SC3483 | 2N3798A | KSC900G
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