MJ1201 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ1201  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 160 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 200 pF

Ganancia de corriente contínua (hFE): 750

Encapsulados: SPECIAL

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MJ1201 datasheet

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 mj12004.pdf pdf_icon

MJ1201

isc Silicon NPN Power Transistor MJ12004 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 9.2. Size:206K  inchange semiconductor
 mj12021.pdf pdf_icon

MJ1201

isc Silicon NPN Power Transistor MJ12021 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high resolution video systems, such as high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(T =25

 9.3. Size:206K  inchange semiconductor
 mj12020.pdf pdf_icon

MJ1201

isc Silicon NPN Power Transistor MJ12020 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high resolution video systems, such as high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(T =25

 9.4. Size:205K  inchange semiconductor
 mj12003.pdf pdf_icon

MJ1201

isc Silicon NPN Power Transistor MJ12003 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

MOSTRAR MÁS

Otros transistores... MJ11031, MJ11032, MJ11033, MJ1200, MJ12002, MJ12003, MJ12004, MJ12005, 13005, MJ12010, MJ12020, MJ12021, MJ12022, MJ13014, MJ13015, MJ13070, MJ13071