MJ12010 Todos los transistores

 

MJ12010 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ12010
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-emisor (Vce): 950 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO3
 

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MJ12010 Datasheet (PDF)

 9.1. Size:208K  inchange semiconductor
 mj12004.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12004DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 9.2. Size:206K  inchange semiconductor
 mj12021.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12021DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 9.3. Size:206K  inchange semiconductor
 mj12020.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12020DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 9.4. Size:205K  inchange semiconductor
 mj12003.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12003DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in CRT deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

MOSTRAR MÁS

Otros transistores... MJ11032 , MJ11033 , MJ1200 , MJ12002 , MJ12003 , MJ12004 , MJ12005 , MJ1201 , BC556 , MJ12020 , MJ12021 , MJ12022 , MJ13014 , MJ13015 , MJ13070 , MJ13071 , MJ13080 .

History: KRC116 | 2S91 | BD278 | 2N394A | KSC3502E

 

 
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