MJ12010 PDF and Equivalents Search

 

MJ12010 Specs and Replacement

Type Designator: MJ12010

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Emitter Voltage |Vce|: 950 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

 MJ12010 Substitution

- BJT ⓘ Cross-Reference Search

 

MJ12010 datasheet

 9.1. Size:208K  inchange semiconductor

mj12004.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12004 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

 9.2. Size:206K  inchange semiconductor

mj12021.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12021 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high resolution video systems, such as high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

 9.3. Size:206K  inchange semiconductor

mj12020.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12020 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high resolution video systems, such as high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

 9.4. Size:205K  inchange semiconductor

mj12003.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12003 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒

Detailed specifications: MJ11032, MJ11033, MJ1200, MJ12002, MJ12003, MJ12004, MJ12005, MJ1201, D209L, MJ12020, MJ12021, MJ12022, MJ13014, MJ13015, MJ13070, MJ13071, MJ13080

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