All Transistors. MJ12010 Datasheet

 

MJ12010 Datasheet and Replacement


   Type Designator: MJ12010
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Emitter Voltage |Vce|: 950 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

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MJ12010 Datasheet (PDF)

 9.1. Size:208K  inchange semiconductor
 mj12004.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12004DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 9.2. Size:206K  inchange semiconductor
 mj12021.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12021DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 9.3. Size:206K  inchange semiconductor
 mj12020.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12020DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 9.4. Size:205K  inchange semiconductor
 mj12003.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12003DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in CRT deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

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Datasheet: MJ11032 , MJ11033 , MJ1200 , MJ12002 , MJ12003 , MJ12004 , MJ12005 , MJ1201 , BC556 , MJ12020 , MJ12021 , MJ12022 , MJ13014 , MJ13015 , MJ13070 , MJ13071 , MJ13080 .

History: 2SA326 | 2SCR533P5 | TIP540 | ET189 | CHT589GP | C45C5

Keywords - MJ12010 transistor datasheet

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