MJ12010 datasheet, аналоги, основные параметры

Наименование производителя: MJ12010  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 950 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 30

Корпус транзистора: TO3

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MJ12010 даташит

 9.1. Size:208K  inchange semiconductor
 mj12004.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12004 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 9.2. Size:206K  inchange semiconductor
 mj12021.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12021 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high resolution video systems, such as high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(T =25

 9.3. Size:206K  inchange semiconductor
 mj12020.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12020 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high resolution video systems, such as high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(T =25

 9.4. Size:205K  inchange semiconductor
 mj12003.pdf pdf_icon

MJ12010

isc Silicon NPN Power Transistor MJ12003 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJ11032, MJ11033, MJ1200, MJ12002, MJ12003, MJ12004, MJ12005, MJ1201, D209L, MJ12020, MJ12021, MJ12022, MJ13014, MJ13015, MJ13070, MJ13071, MJ13080