MJ12021 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ12021  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 850 V

Tensión colector-emisor (Vce): 450 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 15 MHz

Capacitancia de salida (Cc): 350 pF

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO3

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MJ12021 datasheet

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 mj12021.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12021 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high resolution video systems, such as high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:206K  inchange semiconductor
 mj12020.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12020 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high resolution video systems, such as high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(T =25

 8.2. Size:206K  inchange semiconductor
 mj12022.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12022 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high resolution video systems, such as high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:208K  inchange semiconductor
 mj12004.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12004 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

MOSTRAR MÁS

Otros transistores... MJ1200, MJ12002, MJ12003, MJ12004, MJ12005, MJ1201, MJ12010, MJ12020, 2222A, MJ12022, MJ13014, MJ13015, MJ13070, MJ13071, MJ13080, MJ13081, MJ13090