MJ12021 Todos los transistores

 

MJ12021 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ12021
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 350 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO3
 

 Búsqueda de reemplazo de MJ12021

   - Selección ⓘ de transistores por parámetros

 

MJ12021 Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
 mj12021.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12021DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:206K  inchange semiconductor
 mj12020.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12020DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 8.2. Size:206K  inchange semiconductor
 mj12022.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12022DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:208K  inchange semiconductor
 mj12004.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12004DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

MOSTRAR MÁS

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2G40 | DTD143E | 2DA2018

 

 
Back to Top

 


 
.