MJ12021 Todos los transistores

 

MJ12021 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ12021
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 350 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO3
 

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MJ12021 Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
 mj12021.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12021DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:206K  inchange semiconductor
 mj12020.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12020DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 8.2. Size:206K  inchange semiconductor
 mj12022.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12022DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:208K  inchange semiconductor
 mj12004.pdf pdf_icon

MJ12021

isc Silicon NPN Power Transistor MJ12004DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

MOSTRAR MÁS

Otros transistores... MJ1200 , MJ12002 , MJ12003 , MJ12004 , MJ12005 , MJ1201 , MJ12010 , MJ12020 , SS8050 , MJ12022 , MJ13014 , MJ13015 , MJ13070 , MJ13071 , MJ13080 , MJ13081 , MJ13090 .

History: BDX11-6 | TN3704 | 2SA1518 | KTC3199M | D45VM7 | UNR111E | BC857BM

 

 
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