MJ13333 Datasheet. Equivalente

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 mj13333.pdf

isc Silicon NPN Power Transistor MJ13333 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Reversed Biased SOA with Inductive Loads Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits ABSOLUTE

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 mj13333r.pdf

Order this document MOTOROLA by MJ13333/D SEMICONDUCTOR TECHNICAL DATA MJ13333 Designer's Data Sheet SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor NPN SILICON POWER TRANSISTORS The MJ13333 transistor is designed for high voltage, high speed, power switching 400 500 VOLTS in inductive circuits where fall time is critical. It is particularly suited for line operated

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 mj13335.pdf

isc Silicon NPN Power Transistor MJ13335 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

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 mj13332.pdf

isc Silicon NPN Power Transistor MJ13332 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

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 mj13334.pdf

isc Silicon NPN Power Transistor MJ13334 DESCRIPTION Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

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 mj13330.pdf

isc Silicon NPN Power Transistor MJ13330 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

 8.5. Size:206K  inchange semiconductor
 mj13331.pdf

isc Silicon NPN Power Transistor MJ13331 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line