MJ13333 Todos los transistores

 

MJ13333 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ13333
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 175 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 500 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar MJ13333

 

MJ13333 Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
mj13333.pdf

MJ13333
MJ13333

isc Silicon NPN Power Transistor MJ13333DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS) Reversed Biased SOA with Inductive LoadsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection CircuitsABSOLUTE

 0.1. Size:278K  motorola
mj13333r.pdf

MJ13333
MJ13333

Order this documentMOTOROLAby MJ13333/DSEMICONDUCTOR TECHNICAL DATAMJ13333Designer's Data SheetSWITCHMODE Series20 AMPERENPN Silicon Power TransistorNPN SILICONPOWER TRANSISTORSThe MJ13333 transistor is designed for high voltage, highspeed, power switching400500 VOLTSin inductive circuits where fall time is critical. It is particularly suited for line operated

 8.1. Size:210K  inchange semiconductor
mj13335.pdf

MJ13333
MJ13333

isc Silicon NPN Power Transistor MJ13335DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 8.2. Size:207K  inchange semiconductor
mj13332.pdf

MJ13333
MJ13333

isc Silicon NPN Power Transistor MJ13332DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

 8.3. Size:205K  inchange semiconductor
mj13334.pdf

MJ13333
MJ13333

isc Silicon NPN Power Transistor MJ13334DESCRIPTIONLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifiers ,low frequencyswitching and motor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

 8.4. Size:207K  inchange semiconductor
mj13330.pdf

MJ13333
MJ13333

isc Silicon NPN Power Transistor MJ13330DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

 8.5. Size:206K  inchange semiconductor
mj13331.pdf

MJ13333
MJ13333

isc Silicon NPN Power Transistor MJ13331DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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