MJ13333 Datasheet and Replacement

isc Silicon NPN Power Transistor MJ13333DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS) Reversed Biased SOA with Inductive LoadsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection CircuitsABSOLUTE

Order this documentMOTOROLAby MJ13333/DSEMICONDUCTOR TECHNICAL DATAMJ13333Designer's Data SheetSWITCHMODE Series20 AMPERENPN Silicon Power TransistorNPN SILICONPOWER TRANSISTORSThe MJ13333 transistor is designed for high voltage, highspeed, power switching400500 VOLTSin inductive circuits where fall time is critical. It is particularly suited for line operated

isc Silicon NPN Power Transistor MJ13335DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor MJ13332DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

isc Silicon NPN Power Transistor MJ13334DESCRIPTIONLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifiers ,low frequencyswitching and motor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

isc Silicon NPN Power Transistor MJ13330DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

isc Silicon NPN Power Transistor MJ13331DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line