MJ14001
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ14001
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 300
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 60
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 2000
pF
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar MJ14001
MJ14001
Datasheet (PDF)
..1. Size:90K onsemi
mj14001 mj14002 mj14003 mj14003g mj14002g mj14001g.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
..2. Size:90K onsemi
mj14001 mj14002 mj14003.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
0.1. Size:241K motorola
mj14001r.pdf
Order this documentMOTOROLAby MJ14001/DSEMICONDUCTOR TECHNICAL DATANPNMJ14002*High-Current ComplementaryPNPMJ14001Silicon Power Transistors. . . designed for use in highpower amplifier and switching circuit applications,MJ14003* High Current Capability IC Continuous = 60 Amperes DC Current Gain hFE = 15100 @ IC = 50 Adc*Motorola Preferred Device
8.1. Size:90K onsemi
mj14003g.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
8.2. Size:90K onsemi
mj14002g.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
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