MJ14001
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ14001
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 300
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 60
A
Max. Operating Junction Temperature (Tj): 200
°C
Collector Capacitance (Cc): 2000
pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package:
TO3
MJ14001
Transistor Equivalent Substitute - Cross-Reference Search
MJ14001
Datasheet (PDF)
..1. Size:90K onsemi
mj14001 mj14002 mj14003 mj14003g mj14002g mj14001g.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
..2. Size:90K onsemi
mj14001 mj14002 mj14003.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
0.1. Size:241K motorola
mj14001r.pdf
Order this documentMOTOROLAby MJ14001/DSEMICONDUCTOR TECHNICAL DATANPNMJ14002*High-Current ComplementaryPNPMJ14001Silicon Power Transistors. . . designed for use in highpower amplifier and switching circuit applications,MJ14003* High Current Capability IC Continuous = 60 Amperes DC Current Gain hFE = 15100 @ IC = 50 Adc*Motorola Preferred Device
8.1. Size:90K onsemi
mj14003g.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
8.2. Size:90K onsemi
mj14002g.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.