All Transistors. MJ14001 Datasheet

 

MJ14001 Datasheet and Replacement


   Type Designator: MJ14001
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 60 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 2000 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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MJ14001 Datasheet (PDF)

 ..1. Size:90K  onsemi
mj14001 mj14002 mj14003 mj14003g mj14002g mj14001g.pdf pdf_icon

MJ14001

MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS

 ..2. Size:90K  onsemi
mj14001 mj14002 mj14003.pdf pdf_icon

MJ14001

MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS

 0.1. Size:241K  motorola
mj14001r.pdf pdf_icon

MJ14001

Order this documentMOTOROLAby MJ14001/DSEMICONDUCTOR TECHNICAL DATANPNMJ14002*High-Current ComplementaryPNPMJ14001Silicon Power Transistors. . . designed for use in highpower amplifier and switching circuit applications,MJ14003* High Current Capability IC Continuous = 60 Amperes DC Current Gain hFE = 15100 @ IC = 50 Adc*Motorola Preferred Device

 8.1. Size:90K  onsemi
mj14003g.pdf pdf_icon

MJ14001

MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS

Datasheet: MJ13101 , MJ13330 , MJ13331 , MJ13332 , MJ13333 , MJ13334 , MJ13335 , MJ14000 , 2SD1555 , MJ14002 , MJ14003 , MJ15001 , MJ15002 , MJ15003 , MJ15004 , MJ15011 , MJ15012 .

History: 2N2219AQF | BTD2040N3S | DSA9001 | C9013-H

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