MJ16110 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ16110
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 175 W
Tensión colector-base (Vcb): 650 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 400 pF
Ganancia de corriente contínua (hfe): 6
Paquete / Cubierta: TO3
Búsqueda de reemplazo de MJ16110
MJ16110 Datasheet (PDF)
mj16110.pdf

isc Silicon NPN Power Transistor MJ16110DESCRIPTION Collector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in half bridge and full bridge off lineconverters.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PAR
mj16110r.pdf

Order this documentMOTOROLAby MJ16110/DSEMICONDUCTOR TECHNICAL DATA*MJ16110*MJW16110Designer's Data Sheet*Motorola Preferred DeviceNPN Silicon Power TransistorsPOWER TRANSISTORSSWITCHMODE Bridge Series15 AMPERES. . . specifically designed for use in half bridge and full bridge off line converters. 400 VOLTS175 AND 135 WATTS Excellent Dynamic Saturation Char
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BFJ93 | BC847BWT1G | HEPS0034 | 40361 | BF757 | ZTX957 | D44H11E3
History: BFJ93 | BC847BWT1G | HEPS0034 | 40361 | BF757 | ZTX957 | D44H11E3



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