MJ16110 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ16110
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package: TO3
MJ16110 Transistor Equivalent Substitute - Cross-Reference Search
MJ16110 Datasheet (PDF)
mj16110.pdf
isc Silicon NPN Power Transistor MJ16110DESCRIPTION Collector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in half bridge and full bridge off lineconverters.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PAR
mj16110r.pdf
Order this documentMOTOROLAby MJ16110/DSEMICONDUCTOR TECHNICAL DATA*MJ16110*MJW16110Designer's Data Sheet*Motorola Preferred DeviceNPN Silicon Power TransistorsPOWER TRANSISTORSSWITCHMODE Bridge Series15 AMPERES. . . specifically designed for use in half bridge and full bridge off line converters. 400 VOLTS175 AND 135 WATTS Excellent Dynamic Saturation Char
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: KTD1146 | 3DD13003K8
History: KTD1146 | 3DD13003K8
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050