MJ3773 Todos los transistores

 

MJ3773 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ3773
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-emisor (Vce): 140 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3
 

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MJ3773 datasheet

 ..1. Size:200K  inchange semiconductor
 mj3773.pdf pdf_icon

MJ3773

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3773 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@140V High Current-Gain-Bandwidth Product- fT=1MHz(min)@Ic=1A APPLICATIONS Designed for power amplifier and switching applications. For ultimate circuit performance bas

 9.1. Size:200K  inchange semiconductor
 mj3772.pdf pdf_icon

MJ3773

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3772 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@100V High Current-Gain-Bandwidth Product- fT=2MHz(min)@Ic=1A APPLICATIONS Designed for power amplifier and switching applications. For ultimate circuit performance bas

 9.2. Size:204K  inchange semiconductor
 mj3771.pdf pdf_icon

MJ3773

isc Silicon NPN Power Transistor MJ3771 DESCRIPTION High DC Current Gain Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO

Otros transistores... MJ3585 , MJ3701 , MJ3738 , MJ3739 , MJ3760 , MJ3761 , MJ3771 , MJ3772 , S9018 , MJ3801 , MJ3802 , MJ400 , MJ4000 , MJ4001 , MJ4010 , MJ4011 , MJ4030 .

History: A1266

 

 

 


 
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