MJ3773 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ3773
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
MJ3773 Transistor Equivalent Substitute - Cross-Reference Search
MJ3773 Datasheet (PDF)
mj3773.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3773 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@140V High Current-Gain-Bandwidth Product- fT=1MHz(min)@Ic=1A APPLICATIONSDesigned for power amplifier and switching applications. For ultimate circuit performance bas
mj3772.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3772 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@100V High Current-Gain-Bandwidth Product- fT=2MHz(min)@Ic=1A APPLICATIONSDesigned for power amplifier and switching applications. For ultimate circuit performance bas
mj3771.pdf
isc Silicon NPN Power Transistor MJ3771DESCRIPTIONHigh DC Current GainWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
