MJ3773 Specs and Replacement

Type Designator: MJ3773

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

 MJ3773 Substitution

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MJ3773 datasheet

 ..1. Size:200K  inchange semiconductor

 mj3773.pdf pdf_icon

MJ3773

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3773 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@140V High Current-Gain-Bandwidth Product- fT=1MHz(min)@Ic=1A APPLICATIONS Designed for power amplifier and switching applications. For ultimate circuit performance bas... See More ⇒

 9.1. Size:200K  inchange semiconductor

 mj3772.pdf pdf_icon

MJ3773

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3772 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@100V High Current-Gain-Bandwidth Product- fT=2MHz(min)@Ic=1A APPLICATIONS Designed for power amplifier and switching applications. For ultimate circuit performance bas... See More ⇒

 9.2. Size:204K  inchange semiconductor

 mj3771.pdf pdf_icon

MJ3773

isc Silicon NPN Power Transistor MJ3771 DESCRIPTION High DC Current Gain Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO... See More ⇒

Detailed specifications: MJ3585, MJ3701, MJ3738, MJ3739, MJ3760, MJ3761, MJ3771, MJ3772, S9018, MJ3801, MJ3802, MJ400, MJ4000, MJ4001, MJ4010, MJ4011, MJ4030

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