All Transistors. MJ3773 Datasheet

 

MJ3773 Datasheet and Replacement


   Type Designator: MJ3773
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
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MJ3773 Datasheet (PDF)

 ..1. Size:200K  inchange semiconductor
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MJ3773

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3773 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@140V High Current-Gain-Bandwidth Product- fT=1MHz(min)@Ic=1A APPLICATIONSDesigned for power amplifier and switching applications. For ultimate circuit performance bas

 9.1. Size:200K  inchange semiconductor
 mj3772.pdf pdf_icon

MJ3773

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3772 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@100V High Current-Gain-Bandwidth Product- fT=2MHz(min)@Ic=1A APPLICATIONSDesigned for power amplifier and switching applications. For ultimate circuit performance bas

 9.2. Size:204K  inchange semiconductor
 mj3771.pdf pdf_icon

MJ3773

isc Silicon NPN Power Transistor MJ3771DESCRIPTIONHigh DC Current GainWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBO

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SC4910 | HBP1036S6R | 2SA2099 | DT430 | MMDT3946LP4 | 2SD1371 | AC141-6

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