MJ410 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ410

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2.5 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO3

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MJ410 datasheet

 ..1. Size:215K  inchange semiconductor
 mj410.pdf pdf_icon

MJ410

isc Silicon NPN Power Transistor MJ410 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 200V(Min.) CEO(SUS) Low Collector Saturation Voltage- V )= 0.8V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, converters, regulators and switching circuits.

 0.1. Size:139K  motorola
 mj410rev.pdf pdf_icon

MJ410

Order this document MOTOROLA by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon 5 AMPERE Transistors POWER TRANSISTOR NPN SILICON . . . designed for medium to high voltage inverters, converters, regulators and 200 VOLTS switching circuits. 100 WATTS High Collector Emitter Voltage VCEO = 200 Volts DC Current Gain Specified @ 1.0 and 2.5 Adc

Otros transistores... MJ4010, MJ4011, MJ4030, MJ4031, MJ4032, MJ4033, MJ4034, MJ4035, TIP41C, MJ4101, MJ411, MJ413, MJ420, MJ4200, MJ4201, MJ420S, MJ421