MJ410 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ410
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
MJ410 Transistor Equivalent Substitute - Cross-Reference Search
MJ410 Datasheet (PDF)
mj410.pdf
isc Silicon NPN Power Transistor MJ410DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V )= 0.8V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for medium to high voltage inverters, converters,regulators and switching circuits.
mj410rev.pdf
Order this documentMOTOROLAby MJ410/DSEMICONDUCTOR TECHNICAL DATAMJ410High Voltage NPN Silicon5 AMPERETransistorsPOWER TRANSISTORNPN SILICON. . . designed for medium to high voltage inverters, converters, regulators and200 VOLTSswitching circuits.100 WATTS High CollectorEmitter Voltage VCEO = 200 Volts DC Current Gain Specified @ 1.0 and 2.5 Adc
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
