MJ410 Specs and Replacement
Type Designator: MJ410
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
MJ410 Substitution
- BJT ⓘ Cross-Reference Search
MJ410 datasheet
isc Silicon NPN Power Transistor MJ410 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 200V(Min.) CEO(SUS) Low Collector Saturation Voltage- V )= 0.8V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, converters, regulators and switching circuits.... See More ⇒
Order this document MOTOROLA by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon 5 AMPERE Transistors POWER TRANSISTOR NPN SILICON . . . designed for medium to high voltage inverters, converters, regulators and 200 VOLTS switching circuits. 100 WATTS High Collector Emitter Voltage VCEO = 200 Volts DC Current Gain Specified @ 1.0 and 2.5 Adc ... See More ⇒
Detailed specifications: MJ4010, MJ4011, MJ4030, MJ4031, MJ4032, MJ4033, MJ4034, MJ4035, TIP41C, MJ4101, MJ411, MJ413, MJ420, MJ4200, MJ4201, MJ420S, MJ421
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