All Transistors. MJ410 Datasheet

 

MJ410 Datasheet and Replacement


   Type Designator: MJ410
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

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MJ410 Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
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MJ410

isc Silicon NPN Power Transistor MJ410DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V )= 0.8V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for medium to high voltage inverters, converters,regulators and switching circuits.

 0.1. Size:139K  motorola
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MJ410

Order this documentMOTOROLAby MJ410/DSEMICONDUCTOR TECHNICAL DATAMJ410High Voltage NPN Silicon5 AMPERETransistorsPOWER TRANSISTORNPN SILICON. . . designed for medium to high voltage inverters, converters, regulators and200 VOLTSswitching circuits.100 WATTS High CollectorEmitter Voltage VCEO = 200 Volts DC Current Gain Specified @ 1.0 and 2.5 Adc

Datasheet: MJ4010 , MJ4011 , MJ4030 , MJ4031 , MJ4032 , MJ4033 , MJ4034 , MJ4035 , C945 , MJ4101 , MJ411 , MJ413 , MJ420 , MJ4200 , MJ4201 , MJ420S , MJ421 .

History: BC817-40QA | BCM857DS | SE3001 | 2SA36 | BU724AS | NB222EX | UN1110R

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