MJ4101 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ4101

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO66

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MJ4101 datasheet

 9.1. Size:139K  motorola
 mj410rev.pdf pdf_icon

MJ4101

Order this document MOTOROLA by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon 5 AMPERE Transistors POWER TRANSISTOR NPN SILICON . . . designed for medium to high voltage inverters, converters, regulators and 200 VOLTS switching circuits. 100 WATTS High Collector Emitter Voltage VCEO = 200 Volts DC Current Gain Specified @ 1.0 and 2.5 Adc

 9.2. Size:215K  inchange semiconductor
 mj410.pdf pdf_icon

MJ4101

isc Silicon NPN Power Transistor MJ410 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 200V(Min.) CEO(SUS) Low Collector Saturation Voltage- V )= 0.8V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, converters, regulators and switching circuits.

Otros transistores... MJ4011, MJ4030, MJ4031, MJ4032, MJ4033, MJ4034, MJ4035, MJ410, BD139, MJ411, MJ413, MJ420, MJ4200, MJ4201, MJ420S, MJ421, MJ4210