MJ4101 Specs and Replacement

Type Designator: MJ4101

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO66

 MJ4101 Substitution

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MJ4101 datasheet

 9.1. Size:139K  motorola

 mj410rev.pdf pdf_icon

MJ4101

Order this document MOTOROLA by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon 5 AMPERE Transistors POWER TRANSISTOR NPN SILICON . . . designed for medium to high voltage inverters, converters, regulators and 200 VOLTS switching circuits. 100 WATTS High Collector Emitter Voltage VCEO = 200 Volts DC Current Gain Specified @ 1.0 and 2.5 Adc ... See More ⇒

 9.2. Size:215K  inchange semiconductor

 mj410.pdf pdf_icon

MJ4101

isc Silicon NPN Power Transistor MJ410 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 200V(Min.) CEO(SUS) Low Collector Saturation Voltage- V )= 0.8V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, converters, regulators and switching circuits.... See More ⇒

Detailed specifications: MJ4011, MJ4030, MJ4031, MJ4032, MJ4033, MJ4034, MJ4035, MJ410, BD139, MJ411, MJ413, MJ420, MJ4200, MJ4201, MJ420S, MJ421, MJ4210

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