MJ413 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ413

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 325 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2.5 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

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MJ413 datasheet

 ..1. Size:214K  inchange semiconductor
 mj413.pdf pdf_icon

MJ413

isc Silicon NPN Power Transistor MJ413 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 325V(Min.) CEO(SUS) DC Current Gain- h = 20-80@ I = 0.5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATIN

 0.1. Size:134K  motorola
 mj413rev.pdf pdf_icon

MJ413

Order this document MOTOROLA by MJ413/D SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE . . . designed for medium to high voltage inverters, converters, regulators and POWER TRANSISTORS switching circuits. NPN SILICON High Voltage VCEX = 400 Vdc 400 VOLTS Gain Specified to 3.

Otros transistores... MJ4031, MJ4032, MJ4033, MJ4034, MJ4035, MJ410, MJ4101, MJ411, 2N2222, MJ420, MJ4200, MJ4201, MJ420S, MJ421, MJ4210, MJ4211, MJ421S