MJ413 Specs and Replacement
Type Designator: MJ413
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 325 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
MJ413 Substitution
- BJT ⓘ Cross-Reference Search
MJ413 datasheet
isc Silicon NPN Power Transistor MJ413 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 325V(Min.) CEO(SUS) DC Current Gain- h = 20-80@ I = 0.5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATIN... See More ⇒
Order this document MOTOROLA by MJ413/D SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE . . . designed for medium to high voltage inverters, converters, regulators and POWER TRANSISTORS switching circuits. NPN SILICON High Voltage VCEX = 400 Vdc 400 VOLTS Gain Specified to 3.... See More ⇒
Detailed specifications: MJ4031, MJ4032, MJ4033, MJ4034, MJ4035, MJ410, MJ4101, MJ411, 2N2222, MJ420, MJ4200, MJ4201, MJ420S, MJ421, MJ4210, MJ4211, MJ421S
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