MJ413 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ413
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 325 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
MJ413 Transistor Equivalent Substitute - Cross-Reference Search
MJ413 Datasheet (PDF)
mj413.pdf
isc Silicon NPN Power Transistor MJ413DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 325V(Min.)CEO(SUS)DC Current Gain-: h = 20-80@ I = 0.5AFE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for medium to high voltage inverters, converters,regulators and switching circuits.ABSOLUTE MAXIMUM RATIN
mj413rev.pdf
Order this documentMOTOROLAby MJ413/DSEMICONDUCTOR TECHNICAL DATAMJ413MJ423High-Voltage NPN SiliconTransistors10 AMPERE. . . designed for mediumtohigh voltage inverters, converters, regulators andPOWER TRANSISTORSswitching circuits.NPN SILICON High Voltage VCEX = 400 Vdc400 VOLTS Gain Specified to 3.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N6105 | GI3708 | GS9014C
